bft 92w oct-25-1999 1 pnp silicon rf transistor for broadband amplifiers up to 2 ghz at collector currents up to 20 ma complementary type: bfr 92w (npn) 1 3 vso05561 2 esd : e lectro s tatic d ischarge sensitive device, observe handling precaution! type marking pin configuration package bft 92w w1s 1 = b 2 = e 3 = c sot-323 maximum ratings parameter symbol value unit collector-emitter voltage v ceo 15 v collector-emitter voltage v ces 20 collector-base voltage v cbo 20 emitter-base voltage v ebo 2 collector current i c 25 ma base current i b 3 total power dissipation , t s 105 c 1) p tot 200 mw junction temperature t j 150 c ambient temperature t a -65 ... 150 storage temperature t stg -65 ... 150 thermal resistance junction - soldering point r thjs 225 k/w 1 t s is measured on the collector lead at the soldering point to the pcb
bft 92w oct-25-1999 2 electrical characteristics at t a = 25c, unless otherwise specified. parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 1 ma, i b = 0 v (br)ceo 15 - - v collector-base cutoff current v cb = 10 v, i e = 0 i cbo - - 100 na emitter-base cutoff current v eb = 2 v, i c = 0 i ebo - - 10 a dc current gain i c = 15 ma, v ce = 8 v h fe 15 50 - -
bft 92w oct-25-1999 3 electrical characteristics at t a = 25c, unless otherwise specified. parameter symbol values unit min. typ. max. ac characteristics (verified by random sampling) transition frequency i c = 15 ma, v ce = 8 v, f = 500 mhz f t 3.5 5 - ghz collector-base capacitance v cb = 10 v, f = 1 mhz c cb - 0.58 0.9 pf collector-emitter capacitance v ce = 10 v, f = 1 mhz c ce - 0.3 - emitter-base capacitance v eb = 0.5 v, f = 1 mhz c eb - 0.77 - noise figure i c = 2 ma, v ce = 8 v, z s = z sopt , f = 900 mhz f = 1.8 ghz f - - 2 3.2 - - db power gain, maximum available f) i c = 15 ma, v ce = 8 v, z s = z sopt , z l = z lopt , f = 900 mhz f = 1.8 ghz g ma - - 14 8.5 - - transducer gain i c = 15 ma, v ce = 8 v, z s = z l = 50 , f = 900 mhz f = 1.8 ghz | s 21e | 2 - - 11.5 6 - - 1 g ma = | s 21 / s 12 | (k-(k 2 -1) 1/2 )
bft 92w oct-25-1999 4 spice parameters (gummel-poon model, berkley-spice 2g.6 syntax) : transistor chip data is = 4.5354 fa vaf = 10.983 v ne = 1.1172 - var = 47.577 v nc = 1.206 - rbm = 1.5939 cje = 1.7785 ff tf = 32.171 ps itf = 0.013277 ma vjc = 1.2 v tr = 2.0779 ns mjs = 0- xti = 3 - bf = 98.533 - ikf = 0.016123 a br = 10.297 - ikr = 0.019729 a rb = 7.9562 re = 1.5119 vje = 0.79082 v xtf = 0.30227 - ptf = 0 deg mjc = 0.3 - cjs = 0ff xtb = 0- fc = 0.75167 - nf = 0.90551 - ise = 12.196 fa nr = 1.2703 - isc = 0.024709 fa irb = 0.79584 ma rc = 0.66749 mje = 0.32167 - vtf = 0.21451 v cjc = 922.07 ff xcjc = 0.3 - vjs = 0.75 v eg = 1.11 ev tnom 300 k all parameters are ready to use, no scaling is necessary. extracted on behalf of siemens small signal semiconductors by: institut fr mobil-und satellitentechnik (imst) 1996 siemens ag package equivalent circuit: l bi = 0.57 nh l bo = 0.4 l ei = 0.43 l eo = 0.5 l ci = 0 l co = 0.41 c be = 61 ff c cb = 101 c ce = 175 valid up to 6ghz for examples and ready to use parameters please contact your local infineon technologies distributor or sales office to obtain a infineon technologies cd-rom or see internet: http://www.infineon.com/products/discrete/index.htm
bft 92w oct-25-1999 5 total power dissipation p tot = f ( t a *, t s ) * package mounted on epoxy 0 20 40 60 80 100 120 c 150 t a ,t s 0 50 100 150 200 mw 300 p tot t s t a permissible pulse load r thjs = f ( t p ) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 1 10 2 10 3 10 k/w r thjs 0.5 0.2 0.1 0.05 0.02 0.01 0.005 d = 0 permissible pulse load p totmax / p totdc = f ( t p ) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 - p totmax / p totdc d = 0 0.005 0.1 0.02 0.05 0.1 0.2 0.5
bft 92w oct-25-1999 6 collector-base capacitance c cb = f ( v cb ) f = 1mhz 0 2 4 6 8 10 12 14 16 v 20 v cb 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 pf 1.8 c cb transition frequency f t = f ( i c ) v ce = parameter 0 5 10 15 20 ma 30 i c 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 ghz 6.0 f t 10v 8v 5v 3v 2v 1v 0.7v power gain g ma , g ms = f ( i c ) f = 1.8ghz v ce = parameter 0 5 10 15 20 ma 30 i c 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 db 10.0 g 10v 5v 3v 2v 1v 0.7v power gain g ma , g ms = f ( i c ) f = 0.9ghz v ce = parameter 0 5 10 15 20 ma 30 i c 5 6 7 8 9 10 11 12 13 14 db 16 g 10v 5v 3v 2v 1v 0.7v
bft 92w oct-25-1999 7 power gain g ma , g ms = f ( v ce ):_____ | s 21 | 2 = f ( v ce ):--------- f = parameter 0 2 4 6 8 v 12 v ce 0 2 4 6 8 10 12 db 16 g 0.9ghz 1.8ghz 0.9ghz 1.8ghz i c =15ma intermodulation intercept point ip 3 = f ( i c ) (3rd order, output, z s = z l =50 ) v ce = parameter, f = 900mhz 0 5 10 15 20 ma 30 i c 0 5 10 15 20 25 dbm 35 ip 3 8v 3v 2v 1v power gain | s 21 | 2 = f ( f ) v ce = parameter 0.0 0.5 1.0 1.5 2.0 2.5 ghz 3.5 f -5 0 5 10 15 20 db 30 s 21 10v 2v 1v 0.7v i c =15ma power gain g ma , g ms = f ( f ) v ce = parameter 0.0 0.5 1.0 1.5 2.0 2.5 ghz 3.5 f 0 5 10 15 20 25 db 35 g 10v 2v 1v 0.7v i c =15ma
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